Thermodynamic study of photomask plasma etching

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 1195-1206

  Wu, Banqiu ^a  

^a PHOTRONICS INC   (United States)

Author keywords

Etch thermodynamics; Gibbs energy; Photomask; Plasma etch

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; GIBBS FREE ENERGY; INDUCTIVELY COUPLED PLASMA; MASKS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PASSIVATION; PHASE DIAGRAMS; QUARTZ; SEMICONDUCTOR MATERIALS; THERMODYNAMICS;

ETCH THERMODYNAMICS; GAS HEAT CAPACITY; PHOTOMASKS; PLASMA DISCHARGE;

PLASMA ETCHING;

EID: 19844376637     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.584205     Document Type: Conference Paper

References (19)

1. B. Wu, "Synthesis of Zirconium Carbide from Zircon using High Temperature Plasma", Ph.D. Dissertation, The University of Idaho, Moscow, Idaho, pp.41-48 (1996).
2. B. Wu, P.R. Taylor, and E.E. Vidal, "Zirconium Carbide Synthesis in a High Temperature Plasma Reactor," PED Congress by TMS, pp.245-254 (1997).
3. E.J. Rode, and W.R. harshbarger, "Thermodynamic analysis of the W-F-Si-H and W-F-Si-H-Cl systems, J. Vac. Sci. Technol. B 8(1), pp.91-94 (1989).
4. A. Burrows, and C.M. Sharp, "Chemical equilibrium abundances in brown dwarf and extrasolar giant planet atmospheres," Astrophys. J., 512, pp.843-863 (1999).
5. H. Nakata, K. Nishioka, and H. Abe, "Plasma etching characteristics of chromium film and its novel etching mode," J. Vac. Sci. Technol., 17(6), pp.1351-1357 (1980).
6. B. Wu, "An investigation of Cr etch kinetics," Proc. SPIE 5256, pp.701-712 (2003)
7. S. Aoyama, S. Sakamoto, T. Koike, N. Yoshioka, N. Harashima, A. Hayashi, and T. Sasaki, "Advanced Cr dry etching process," Proc. SPIE 3748, pp.137-146 (1999).
8. Y. Watakabe, S. Matsuda, A. Shigetomi, M. Hirosue, T. Kato, and H. Nakata, "High performance very large scale integrated photomask with a silicide film," J. Vac. Sci. Technol B 4(4), pp.841-844 (1986).
9. C. Pierrat, R.G. Tarascon, M.L. Peabody, L.R. Harriott, and S. Vaidya, "Dry etched molybdenum silicide photomasks for submicron integrated circuit fabrication," J. Vac. Sci. Technol. B, 9(6), pp.3132-3137 (1991)
10. 3 gas mixtures," J. Appl. Phys. 53(8), pp.5531-5540 (1982).
11. M. Zhang, J.Z. Li, I. Adesida, and E.D. Wolf, "Reactive ion etching for submicron structures of refractory metal silicides," J. Vac. Sci. Technol. B 1(4), pp.1037-1042 (1983).
12. Y. Tokoro, S. Kawada, T. Yamamoto, Y. Saito, A. Hayashi, and A. Isao, "Attenuated phase-shifting mask blanks for the deep ultraviolet," Proc. SPIE 2322, pp.387-391 (1994).
13. R. Jonckheere, K. Ronse, O. Popa, and I.V. de hove, "Molybdenum silicide based attenuated phase-shift masks," J. Vac. Sci. Technol. B, 12(6), pp.3765-3772 (1994).
14. M. Ushida, M. Mitsui, K. Okada, Y. Ohkubo, H. Suda, H. Kobayashi, and K. Asakawa, "Development of Deep UV MoSi-based embedded phase-shifting mask (EPSM) blanks," Proc. SPIE 2884, pp.403-410 (1996).
15. B. Wu and D. Chan, "MoSi etch of phase-shift masks", J. Microlith. Microfab. Microsyst. 2(1), pp.54-60 (2003).
16. E. Hoshino, T. Ogawa, M. Takahashi, H. Hoko, H. Yamanashi, N. Hirano, and S. Okazaki, "Damage Control during Dry Etrching of EUV Mask-1-Control of Surface Roughness," Proc. SPIE 3873, pp.786-791 (1999).
17. E. Hoshino, T. Ogawa, N. Hirano, H. Hoko, M. Takahashi, H. Yamanashi, A. Chiba, M. Ito, and S. Okazaki, "Dry Etching of Ta Absorber for EUVL Masks," Proc. SPIE 4186, pp.749-755 (2000).
18. K.C. Racette, C.T. Williams, and M.J. Lercel, "Characterization and etching of sputter deposited absorber films for extreme ultraviolet lithography," Proc. SPIE 4562, pp.883-892 (2001).
19. G. Zhang and P.Y. Yan, "Cr and TaN Absorber Mask Etch CD Performance Study For Extreme Ultraviolet Lithography," Proc. SPIE 4889, pp.1092-1098 (2002).