Treshold voltage modulation in FinFET devices through arsenic ion implantation into TiN/HfSiON gate stack

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 31-32

  Witters, L ^a   Son, N J ^b   Ferain, I ^a,c   San, T ^d   Singanamalla, R ^a,c   Kerner, C ^a   Collaert, N ^a   De Meyer, K ^a,c   Jurczak, M ^a  

^a EMEC   (Belgium)

^b Samsung Assignee at EMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d TEXAS INSTRUMENTS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43549095410     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357838     Document Type: Conference Paper

References (5)

1. ITRS, Semiconductor Industry Association, San Jose, 2001
2. Y. Taur et al., TED Vol 48 No 12, 2001, p2861
3. N.Collaert et al., Symp. VLSI Tech. Dig., 2005, p108
4. C.Y.Kang et al, IEDM Tech, Dig., 2006
5. R.Singanamalla et al., Japanese Journal Applied Physics, Vol.46, No. 14, 2007, p L320-L322