Characterization of amino acid adlayers on InAs surfaces using X-ray photoelectron spectroscopy

Journal of Electron Spectroscopy and Related Phenomena

Volumn 172, Issue 1-3, 2009, Pages 47-53

  Slavin, John W J ^a   Jarori, Upasana ^b   Zemlyanov, Dmitry ^a   Ivanisevic, Albena ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Amino acid; InAs; SAM; XPS

Indexed keywords

ADLAYERS; AFM; ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; ASPARTIC ACIDS; ELECTROSTATIC INTERACTIONS; ELECTROSTATIC STABILIZATION; II-IV SEMICONDUCTORS; INAS; LO PHONONS; MONOLAYER FORMATION; OXIDE FORMATION; OXIDE GROWTH; PEPTIDE SIDE CHAINS; RAMAN DATA; RAMAN SPECTRA; SAM; SURFACE OXIDE LAYER; XPS;

ACOUSTIC MICROSCOPES; AMINATION; AMINES; AMINO ACIDS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CONTACT ANGLE; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; ELECTROSTATICS; FUNCTIONAL GROUPS; INDIUM ARSENIDE; ORGANIC ACIDS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67349170308     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2009.03.006     Document Type: Article

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