Effects of oxygen to argon ratio on Ba(Zr 0.2Ti 0.8) O 3 thin films prepared by RF magnetron sputtering

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 7, 2009, Pages 614-618

  Wang, Bo ^a   Yang, Chuan Ren ^a   Chen, Hong Wei ^a   Zhang, Ji Hua ^a   Yu, An ^a   Zhang, Rui Ting ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BZT THIN FILMS; DIELECTRIC CONSTANTS; FERROELECTRIC PROPERTIES; GRAIN SIZES; LOSS TANGENTS; MIXING RATIOS; OXYGEN-RICH ATMOSPHERES; PREFERRED ORIENTATIONS; RADIO-FREQUENCY MAGNETRON SPUTTERING; RF- MAGNETRON SPUTTERING; TUNABILITY;

BARIUM; ELECTRODEPOSITION; MAGNETRON SPUTTERING; MAGNETRONS; OXYGEN; SURFACE ROUGHNESS; THIN FILMS; ZIRCONIUM;

ARGON;

EID: 67349151282     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9774-2     Document Type: Article

References (22)

1. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, J. Appl. Phys. 100, 051606 (2006). doi: 10.1063/1.2336999
2. C.M. Carlson, T.V. Rivkin, P.A. Parilla, J.D. Perkins, D.S. Ginley, A.B. Kozyrev et al., Appl. Phys. Lett. 76(14), 1920-1922 (2000) doi: 10.1063/ 1.126212
3. W.J. Kim, W. Chang, S.B. Quadra, J.M. Pond, S.W. Kirchoefer, D.B. Chrisey et al., Appl. Phys. Lett. 76, 1185 (2000) doi: 10.1063/1.125977
4. M. Jain, N.K. Karan, R.S. Katiyar, A.S. Bhalla, F.A. Miranda, F.W. Van Keuls, Appl. Phys. Lett. 85(2), 275-277 (2004). doi: 10.1063/1.1771459
5. J. Park, J.W. Lu, S. Stemmer, J. Appl. Phys. 97, 084110 (2005). doi: 10.1063/1.1883306
6. W. Chang, J.S. Horwitz, A.C. Carter, J.M. Pond, S.W. Kirchoefer, C.M. Gilmore et al., Appl. Phys. Lett. 74(7), 1033-1035 (1999) doi: 10.1063/ 1.123446
7. H.S. Kim, H.G. Kim, I.D. Kim, K.B. Kim, J.C. Lee, Appl. Phys. Lett. 87, 212903 (2005). doi: 10.1063/1.2133888
8. X.H. Sun, B.L. Zhu, T. Liu, M.Y. Li, X.Z. Zhao, J. Appl. Phys. 99, 084103 (2006). doi: 10.1063/1.2189976
9. J. Xu, W. Menesklou, E. Ivers-Tiffée, J. Eur. Ceram. Soc. 25, 2289-2293 (2005). doi: 10.1016/j.jeurceramsoc.2005.03.048
10. J.W. Zhai, X. Yao, L.Y. Zhang, B. Shen, Appl. Phys. Lett. 84, 3136 (2004). doi: 10.1063/1.1715152
11. T. Maiti, R. Guo, A.S. Bhalla, Appl. Phys. Lett. 89, 122909 (2006). doi: 10.1063/1.2354438
12. W.S. Choi, B.S. Jang, D.G. Lim, J.S. Yi, J. Cryst. Growth 237, 438-442 (2002). doi: 10.1016/S0022-0248(01)01965-0
13. F.M. Pontes, M.T. Escote, C.C. Escudeiro, E.R. Leite, E. Longo, A.J. Chiquito et al., J. Appl. Phys. 96(8), 4386-4391 (2004) doi: 10.1063/ 1.1775048
14. W. Zhang, X.G. Tang, K.H. Wong, H.L.W. Chan, Scripta Mater. 54, 197-200 (2006). doi: 10.1016/j.scriptamat.2005.09.034
15. W.A. Lan, T.C. Wang, L.H. Huang, T.B. Wu, Appl. Phys. Lett. 89, 022910 (2006). doi: 10.1063/1.2214170
16. X.H. Zhu, J. Li, D.N. Zheng, Appl. Phys. Lett. 90, 142913 (2007). doi: 10.1063/1.2720303
17. X.G. Tang, H.Y. Tian, J. Wang, K.H. Wong, H.L.W. Chan, Appl. Phys. Lett. 89, 142911 (2006). doi: 10.1063/1.2360177
18. X.G. Tang, Q.X. Liu, Y.P. Jiang, R.K. Zheng, H.L.W. Chan, J. Appl. Phys. 100, 114105 (2006). doi: 10.1063/1.2393010
19. W.F. Qin, J. Xiong, J. Zhu, J.L. Tang, W.J. Jie, Y. Zhang et al., J. Mater. Sci. 43, 409-412 (2008) doi: 10.1007/s10853-007-2177-6
20. W.S. Choi, J.S. Yi, B. Hong, Mater. Sci. Eng. B 109, 146-151 (2004). doi: 10.1016/j.mseb.2003.10.081
21. W.S. Choi, B.S. Jang, Y. Roh, J. Yi, B. Hong, J. Non-Cryst. Solids 303, 190-193 (2002) doi: 10.1016/S0022-3093(02)00984-5
22. M.S. Tsai, S.C. Sun, T.Y. Tseng, J. Appl. Phys. 82(7), 3482-3487 (1997). doi: 10.1063/1.365665