High-tunability and low-microwave-loss Ba0.6Sr 0.4TiO3 thin films grown on high-resistivity Si substrates using TiO2 buffer layers

Applied Physics Letters

Volumn 87, Issue 21, 2005, Pages 1-3

  Kim, Hyun Suk ^a   Kim, Ho Gi ^a   Kim, Il Doo ^b   Kim, Ki Byoung ^c   Lee, Jong Chul ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CONDUCTIVITY; INTEGRATION; MICROWAVES; SILICON; SINGLE CRYSTALS; THIN FILMS; TITANIUM DIOXIDE;

BUFFER LAYERS; INTERDIGITAL CAPACITORS; MICROWAVE BUFFERS; MICROWAVE LOSS;

BARIUM COMPOUNDS;

EID: 27844580370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2133888     Document Type: Article

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