Morphology of Si surfaces sputter-eroded by low-energy Xe-ions at glancing incident angle

Surface and Coatings Technology

Volumn 203, Issue 17-18, 2009, Pages 2395-2398

  Zhang, K ^a   Hofsass H ^a   Rotter, F ^a   Uhrmacher, M ^a   Ronning, C ^a   Krauser, J ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b HARZ UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

Ion beam erosion; Si; Sputtering; Surface structure and topography

Indexed keywords

AMBIENT CONDITIONS; BEAM DIRECTIONS; CRITICAL ANGLES; EXPERIMENTAL TESTS; EXPONENTIAL FUNCTIONS; FLUENCE; FLUENCES; GLANCING INCIDENT ANGLES; ION IRRADIATIONS; LOW ENERGIES; NANO-PATTERNS; NANO-SCALE; PARALLEL ORIENTATIONS; POWER-LAW FUNCTIONS; RIPPLE FORMATIONS; RIPPLE PATTERNS; ROOM TEMPERATURES; SI; SI SURFACES; SPUTTER EROSIONS;

ENGINEERING GEOLOGY; EROSION; ION BEAMS; IONS; SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; TWO DIMENSIONAL; XENON;

ION BOMBARDMENT;

EID: 67349143974     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.02.105     Document Type: Article

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