Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 3084-3087

  Rogers, D J ^a   Look, D C ^b   Téhérani, F Hosseini ^a   Minder, K ^c   Razeghi, M ^c   Largeteau, A ^d   Demazeau, G ^d   Morrod, J ^e   Prior, K A ^e   Lusson, A ^f   Hassani, S ^f  

^a 8 Route de Chevreuse France   (France)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Northwestern University   (United States)

^d INST CHIM MATIERE COND BORDEAUX   (France)

^e HERIOT WATT UNIVERSITY   (United Kingdom)

^f Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; GROWTH AMBIENT; HALL MEASUREMENTS; N-TYPE CONDUCTION; PHOTOLUMINESCENCE SPECTRUM; POST ANNEALING; ROOM TEMPERATURE; SURFACE QUALITIES; TEMPERATURE DEPENDENT; TWO-STEP GROWTH; ZNO BUFFER LAYER; ZNO FILMS; ZNO THIN FILM;

ALUMINUM; BIOACTIVITY; CARRIER CONCENTRATION; DISTILLATION; LIGHT; METALLIC FILMS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR LASERS; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTOR GROWTH;

EID: 67349141774     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779315     Document Type: Conference Paper

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