-
1
-
-
0031994210
-
Electrical properties of bulk ZnO
-
D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, "Electrical properties of bulk ZnO," Solid State Commun. 105, pp. 399-401 (1998).
-
(1998)
Solid State Commun
, vol.105
, pp. 399-401
-
-
Look, D.C.1
Reynolds, D.C.2
Sizelove, J.R.3
Jones, R.L.4
Litton, C.W.5
Cantwell, G.6
Harsch, W.C.7
-
2
-
-
31144475928
-
ZnO p-n junction light-emitting diodes fabricated on sapphire substrates
-
S. J Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, "ZnO p-n junction light-emitting diodes fabricated on sapphire substrates," Appl. Phys. Lett. Vol. 88, pp. 031911 (2006).
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 031911
-
-
Jiao, S.J.1
Zhang, Z.Z.2
Lu, Y.M.3
Shen, D.Z.4
Yao, B.5
Zhang, J.Y.6
Li, B.H.7
Zhao, D.X.8
Fan, X.W.9
Tang, Z.K.10
-
3
-
-
33646723835
-
ZnO Based Light Emitting Diodes Growth and Fabrication
-
M. Pan, R. Rondon, J. Cloud, V. Rengarajan, W. Nemeth, A. Valencia, J. Gomez, N. Spencer, J. Nause, "ZnO Based Light Emitting Diodes Growth and Fabrication," Proc. Of SPIE vol.6122, 61220M, (2006).
-
(2006)
Proc. Of SPIE
, vol.6122
-
-
Pan, M.1
Rondon, R.2
Cloud, J.3
Rengarajan, V.4
Nemeth, W.5
Valencia, A.6
Gomez, J.7
Spencer, N.8
Nause, J.9
-
4
-
-
33646698905
-
Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode
-
D. J. Rogers, F. Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, "Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode," Appl. Phys. Lett. Vol. 88, pp. 141918 (2006).
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 141918
-
-
Rogers, D.J.1
Hosseini Teherani, F.2
Yasan, A.3
Minder, K.4
Kung, P.5
Razeghi, M.6
-
5
-
-
20944436871
-
p-ZnO/n-GaN heterostructure ZnO light-emitting diodes
-
Dae-Kue Hwang, Soon-Hyung Kang, Jae-Hong Lim, Eun-Jeong Yang, Jin-Yong Oh, Jin-Ho Yang, and Seong-Ju Park, "p-ZnO/n-GaN heterostructure ZnO light-emitting diodes," Appl. Phys. Lett. Vol. 86, pp. 222101 (2005).
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 222101
-
-
Hwang, D.1
Kang, S.2
Lim, J.3
Yang, E.4
Oh, J.5
Yang, J.6
Park, S.7
-
6
-
-
0347946924
-
Excitonic properties of the polar faces of bulk ZnO after wet etching
-
J. Fryar, E. McGlynn, M. O. Henry, A. A. Cafolla, C. J. Hanson, "Excitonic properties of the polar faces of bulk ZnO after wet etching," Physica B 340-342 pp. 210-215 (2003).
-
(2003)
Physica B
, vol.340-342
, pp. 210-215
-
-
Fryar, J.1
McGlynn, E.2
Henry, M.O.3
Cafolla, A.A.4
Hanson, C.J.5
-
7
-
-
3042751898
-
Wet-Chemical Etching of (11-20) ZnO Films
-
J. Zhu, N. W. Emanetoglu, Y. Chen, B. V. Yakshinskiy, and Y. Lu, "Wet-Chemical Etching of (11-20) ZnO Films," J. of Electronic Materials, Vol. 33, No.6, (2004).
-
(2004)
J. of Electronic Materials
, vol.33
, Issue.6
-
-
Zhu, J.1
Emanetoglu, N.W.2
Chen, Y.3
Yakshinskiy, B.V.4
Lu, Y.5
-
9
-
-
33846929195
-
Wet chemical etching of ZnO film using aqueous acidic salt
-
doi:10.1016/j.tsf.2006.09.017
-
H. Zheng, X. L. Du, Q. Luo, J. F. Jia, C. Z. Gu, Q. K. Xue, "Wet chemical etching of ZnO film using aqueous acidic salt," Thin Solid Films (2006), doi:10.1016/j.tsf.2006.09.017.
-
(2006)
Thin Solid Films
-
-
Zheng, H.1
Du, X.L.2
Luo, Q.3
Jia, J.F.4
Gu, C.Z.5
Xue, Q.K.6
-
10
-
-
33750795317
-
Ohmic Contact to Phosporous-Doped ZnO Using Pt/Ni/Au for p-n Homojunction Dioide
-
Ji-Myon Lee, K. K. Kim, H. Tampo, A. Yamada, and S. Niki, "Ohmic Contact to Phosporous-Doped ZnO Using Pt/Ni/Au for p-n Homojunction Dioide," J. of the Electrochemical Society vol. 153, No. 12, pp. G1047-G1050 (2006).
-
(2006)
J. of the Electrochemical Society
, vol.153
, Issue.12
-
-
Ji-Myon Lee, K.1
Kim, K.2
Tampo, H.3
Yamada, A.4
Niki, S.5
-
11
-
-
1542470314
-
High Power 280 nm AlGaN Light Emitting Diodes Based on an Asymmetric Single Quantum Well
-
K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, "High Power 280 nm AlGaN Light Emitting Diodes Based on an Asymmetric Single Quantum Well", Appl. Phys. Lett. Vol. 84, no. 7, pp. 1046-1048, 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.7
, pp. 1046-1048
-
-
Mayes, K.1
Yasan, A.2
McClintock, R.3
Shiell, D.4
Darvish, S.R.5
Kung, P.6
Razeghi, M.7
-
12
-
-
0345794020
-
280 nm UV LEDs grown on HVPE GaN substrates
-
Opto-elect. Rev
-
A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, and R. J. Molnar, "280 nm UV LEDs grown on HVPE GaN substrates", Opto-elect. Rev. vol. 10, no. 4, pp. 287-289, 2002.
-
(2002)
, vol.10
, Issue.4
, pp. 287-289
-
-
Yasan, A.1
McClintock, R.2
Mayes, K.3
Darvish, S.R.4
Kung, P.5
Razeghi, M.6
Molnar, R.J.7
-
13
-
-
21844436535
-
-
D. J. Rogers, F. Hosseini Teherani, A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, and G. Garry, Proc. SPIE vol. 5732, pp. 412 (2005).
-
(2005)
Proc. SPIE
, vol.5732
, pp. 412
-
-
Rogers, D.J.1
Hosseini Teherani, F.2
Yasan, A.3
McClintock, R.4
Mayes, K.5
Darvish, S.R.6
Kung, P.7
Razeghi, M.8
Garry, G.9
|