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Volumn 6474, Issue , 2007, Pages

Etching of ZnO towards the Development of ZnO Homostructure LEDs

Author keywords

Etching; Light emitting diode; Processing; Ultraviolet; ZnO

Indexed keywords

HOMOJUNCTIONS; HOMOSTRUCTURES; OPTICAL UV LASING;

EID: 34248667010     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712784     Document Type: Conference Paper
Times cited : (6)

References (13)
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  • 5
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    • Dae-Kue Hwang, Soon-Hyung Kang, Jae-Hong Lim, Eun-Jeong Yang, Jin-Yong Oh, Jin-Ho Yang, and Seong-Ju Park, "p-ZnO/n-GaN heterostructure ZnO light-emitting diodes," Appl. Phys. Lett. Vol. 86, pp. 222101 (2005).
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    • Hwang, D.1    Kang, S.2    Lim, J.3    Yang, E.4    Oh, J.5    Yang, J.6    Park, S.7
  • 6
    • 0347946924 scopus 로고    scopus 로고
    • Excitonic properties of the polar faces of bulk ZnO after wet etching
    • J. Fryar, E. McGlynn, M. O. Henry, A. A. Cafolla, C. J. Hanson, "Excitonic properties of the polar faces of bulk ZnO after wet etching," Physica B 340-342 pp. 210-215 (2003).
    • (2003) Physica B , vol.340-342 , pp. 210-215
    • Fryar, J.1    McGlynn, E.2    Henry, M.O.3    Cafolla, A.A.4    Hanson, C.J.5
  • 9
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    • Wet chemical etching of ZnO film using aqueous acidic salt
    • doi:10.1016/j.tsf.2006.09.017
    • H. Zheng, X. L. Du, Q. Luo, J. F. Jia, C. Z. Gu, Q. K. Xue, "Wet chemical etching of ZnO film using aqueous acidic salt," Thin Solid Films (2006), doi:10.1016/j.tsf.2006.09.017.
    • (2006) Thin Solid Films
    • Zheng, H.1    Du, X.L.2    Luo, Q.3    Jia, J.F.4    Gu, C.Z.5    Xue, Q.K.6
  • 10
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    • Ohmic Contact to Phosporous-Doped ZnO Using Pt/Ni/Au for p-n Homojunction Dioide
    • Ji-Myon Lee, K. K. Kim, H. Tampo, A. Yamada, and S. Niki, "Ohmic Contact to Phosporous-Doped ZnO Using Pt/Ni/Au for p-n Homojunction Dioide," J. of the Electrochemical Society vol. 153, No. 12, pp. G1047-G1050 (2006).
    • (2006) J. of the Electrochemical Society , vol.153 , Issue.12
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  • 11
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    • High Power 280 nm AlGaN Light Emitting Diodes Based on an Asymmetric Single Quantum Well
    • K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, "High Power 280 nm AlGaN Light Emitting Diodes Based on an Asymmetric Single Quantum Well", Appl. Phys. Lett. Vol. 84, no. 7, pp. 1046-1048, 2004.
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.