Far-infrared sensor with LPCVD-deposited low-stress Si-rich nitride absorber membrane. Part 2: Thermal property, and sensitivity

Sensors and Actuators, A: Physical

Volumn 152, Issue 2, 2009, Pages 126-138

  Jutzi, F ^b   Wicaksono, D H B ^a   Pandraud, G ^a   de Rooij, N ^b   French, P J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b EPFL   (Switzerland)

Author keywords

Far infrared sensor; LPCVD SiN; MEMS; Thermal property

Indexed keywords

A-THERMAL; ABSORPTIVITY; ANALYTICAL MODELLING; CHARACTERISATION; FAR-INFRARED; FAR-INFRARED RADIATION; FAR-INFRARED SENSOR; INFRARED SENSING DEVICES; LOW STRESS; LPCVD SIN; MEMBRANE MATERIAL; NUMERICAL SIMULATION; OPTICAL ABSORPTION PROPERTIES; SCALING DOWN; THERMAL PROPERTIES; THERMAL PROPERTY; THERMAL SENSITIVITY; WAVELENGTH REGIONS;

HYBRID MATERIALS; INFRARED DETECTORS; INFRARED RADIATION; MEMBRANES; MEMS; MICROELECTROMECHANICAL DEVICES; SILICON; SILICON NITRIDE; THERMODYNAMIC PROPERTIES;

SENSORS;

EID: 67349117368     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.12.024     Document Type: Article

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