Far-infrared sensor with LPCVD-deposited low-stress Si-rich nitride absorber membrane-Part 1. Optical absorptivity

Sensors and Actuators, A: Physical

Volumn 152, Issue 2, 2009, Pages 119-125

  Jutzi, F ^b   Wicaksono, D H B ^a   Pandraud, G ^a   de Rooij, N ^b   French, P J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b EPFL   (Switzerland)

Author keywords

Far infrared sensor; LPCVD SiN; MEMS; Optical absorptivity

Indexed keywords

A-THERMAL; ABSORBANCE; ABSORPTIVITY; DESIGN AND OPTIMIZATION; FAR-INFRARED; FAR-INFRARED RADIATION; FAR-INFRARED SENSOR; INFRARED SENSING DEVICES; LOW STRESS; LPCVD SIN; MEMBRANE MATERIAL; OBSERVED DATA; OPTICAL ABSORPTION PROPERTIES; OPTICAL ABSORPTIVITY; SCALING DOWN; THEORETICAL SIMULATION; THERMAL PROPERTIES; WAVELENGTH REGIONS;

FILM THICKNESS; INFRARED DETECTORS; INFRARED RADIATION; MEMBRANES; MEMS; MICROELECTROMECHANICAL DEVICES; SILICON; SILICON NITRIDE; THERMODYNAMIC PROPERTIES;

SENSORS;

EID: 67349163270     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.12.023     Document Type: Article

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