Transparent zinc oxide gate metal-oxide-semiconductor field-effect transistor for high-responsivity photodetector

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 493-495

  Lee, Eujune ^a   Moon, Dong Il ^a   Yang, Ji Han ^a   Lim, Keong Su ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Field effect phototransistor; Photodetector; Transparent gate

Indexed keywords

BULK SILICON; CHANNEL REGION; FIELD-EFFECT; FIELD-EFFECT PHOTOTRANSISTOR; GATE METALS; METAL OXIDE SEMICONDUCTOR; MOS-FET; N-CHANNEL; NEW STRUCTURES; OPTICAL WINDOW; POLYCRYSTALLINE; RECOMBINATION RATE; RESPONSIVITY; TRANSPARENT GATE; WHITE-LIGHT ILLUMINATION; ZNO;

AMPLIFICATION; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOSFET DEVICES; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTOTRANSISTORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; ZINC; ZINC OXIDE;

PHOTODETECTORS;

EID: 67349114534     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016765     Document Type: Article

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