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Volumn 44, Issue 3, 2000, Pages 535-540

High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HOLE TRAPS; LIGHTING; PHOTOCURRENTS; PHOTODETECTORS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

EID: 0034159618     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00260-9     Document Type: Article
Times cited : (9)

References (9)
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    • 0030378204 scopus 로고    scopus 로고
    • Technology and device scaling considerations for CMOS imagers
    • Wong H-S. Technology and device scaling considerations for CMOS imagers. IEEE Trans. Electron Devices, 1996;43(12).
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.12
    • Wong, H.-S.1
  • 3
    • 0031249402 scopus 로고    scopus 로고
    • CMOS imager sensors: Electronic camera-on-a-chip
    • Fossum ER. CMOS imager sensors: electronic camera-on-a-chip. IEEE Trans. Electron Devices 1997;44(10).
    • (1997) IEEE Trans. Electron Devices , vol.44 , Issue.10
    • Fossum, E.R.1
  • 4
    • 0029492041 scopus 로고
    • A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process
    • Sandage RW, Connelly JA. A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process. IEDM Tech. Dig. 1995:171-4.
    • (1995) IEDM Tech. Dig. , pp. 171-174
    • Sandage, R.W.1    Connelly, J.A.2
  • 5
    • 0030079770 scopus 로고    scopus 로고
    • High-sensitivity SOI MOS photodetector with self-amplification
    • Yamamoto H., Taniguchi K., Hamaguchi C. High-sensitivity SOI MOS photodetector with self-amplification. Jpn. J. Appl. Phys. 35:1996;1382-1386.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1382-1386
    • Yamamoto, H.1    Taniguchi, K.2    Hamaguchi, C.3
  • 6
    • 0032205059 scopus 로고    scopus 로고
    • Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate
    • Zhang W., Chan M., Fung S., Ko P.K. Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate. Electron Device Lett. 19:(11):1998;435-437.
    • (1998) Electron Device Lett. , vol.19 , Issue.11 , pp. 435-437
    • Zhang, W.1    Chan, M.2    Fung, S.3    Ko, P.K.4
  • 8
    • 0027592565 scopus 로고
    • Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET
    • Parke S.A., Hu C., Ko P.K. Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET. Electron Device Lett. 14:(5):1993;234-236.
    • (1993) Electron Device Lett. , vol.14 , Issue.5 , pp. 234-236
    • Parke, S.A.1    Hu, C.2    Ko, P.K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.