-
1
-
-
0010233284
-
Takes over where silicon leaves off
-
Peters L. Takes over where silicon leaves off. Semiconductor International 1993:48-51.
-
(1993)
Semiconductor International
, pp. 48-51
-
-
Peters, L.1
-
2
-
-
0030378204
-
Technology and device scaling considerations for CMOS imagers
-
Wong H-S. Technology and device scaling considerations for CMOS imagers. IEEE Trans. Electron Devices, 1996;43(12).
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, Issue.12
-
-
Wong, H.-S.1
-
3
-
-
0031249402
-
CMOS imager sensors: Electronic camera-on-a-chip
-
Fossum ER. CMOS imager sensors: electronic camera-on-a-chip. IEEE Trans. Electron Devices 1997;44(10).
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, Issue.10
-
-
Fossum, E.R.1
-
4
-
-
0029492041
-
A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process
-
Sandage RW, Connelly JA. A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process. IEDM Tech. Dig. 1995:171-4.
-
(1995)
IEDM Tech. Dig.
, pp. 171-174
-
-
Sandage, R.W.1
Connelly, J.A.2
-
5
-
-
0030079770
-
High-sensitivity SOI MOS photodetector with self-amplification
-
Yamamoto H., Taniguchi K., Hamaguchi C. High-sensitivity SOI MOS photodetector with self-amplification. Jpn. J. Appl. Phys. 35:1996;1382-1386.
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
, pp. 1382-1386
-
-
Yamamoto, H.1
Taniguchi, K.2
Hamaguchi, C.3
-
6
-
-
0032205059
-
Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate
-
Zhang W., Chan M., Fung S., Ko P.K. Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate. Electron Device Lett. 19:(11):1998;435-437.
-
(1998)
Electron Device Lett.
, vol.19
, Issue.11
, pp. 435-437
-
-
Zhang, W.1
Chan, M.2
Fung, S.3
Ko, P.K.4
-
7
-
-
84908167248
-
A versatile, SOI BiCMOS technology with complementary lateral BJT
-
Parke SA, Assaderaghi F, Chen J, King J, Hu C, Ko PK. A versatile, SOI BiCMOS technology with complementary lateral BJT. IEDM Tech. Dig. 1992:453-6.
-
(1992)
IEDM Tech. Dig.
, pp. 453-456
-
-
Parke, S.A.1
Assaderaghi, F.2
Chen, J.3
King, J.4
Hu, C.5
Ko, P.K.6
-
8
-
-
0027592565
-
Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET
-
Parke S.A., Hu C., Ko P.K. Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET. Electron Device Lett. 14:(5):1993;234-236.
-
(1993)
Electron Device Lett.
, vol.14
, Issue.5
, pp. 234-236
-
-
Parke, S.A.1
Hu, C.2
Ko, P.K.3
-
9
-
-
0026253926
-
High-gain lateral bipolar action in a MOSFET structure
-
Verdonckt-Vandebroek S., Wong S.S., Woo J.C.S., Ko P.K. High-gain lateral bipolar action in a MOSFET structure. IEEE Trans. Electron Devices. 38:(21):1991;2487.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, Issue.21
, pp. 2487
-
-
Verdonckt-Vandebroek, S.1
Wong, S.S.2
Woo, J.C.S.3
Ko, P.K.4
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