SOI-MOSFET/diode composite photodetection device

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2897-2902

  Uryu, Y ^a   Asano, T ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Composite device; Floating body effect; Floating gate effect; Lateral bipolar transistor; Photodetection device; SOI; SOI MOSFET

Indexed keywords

AMPLIFICATION; BIPOLAR TRANSISTORS; GATES (TRANSISTOR); MOSFET DEVICES; PHOTOCURRENTS; PHOTODIODES; SILICON ON INSULATOR TECHNOLOGY;

FLOATING GATES; PHOTOCURRENT AMPLIFICATION;

PHOTODETECTORS;

EID: 0035300699     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2897     Document Type: Article

References (5)