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Volumn 19, Issue 11, 1998, Pages 435-437

Performance of a CMOS Compatible Lateral Bipolar Photodetector on SOI Substrate

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; MOSFET DEVICES; PHOTODETECTORS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

EID: 0032205059     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728904     Document Type: Article
Times cited : (37)

References (9)
  • 1
    • 0010233284 scopus 로고
    • SOI takes over where silicon leaves off
    • Mar.
    • L. Peters, "SOI takes over where silicon leaves off," Semicond. Int., pp. 48-51, Mar. 1993.
    • (1993) Semicond. Int. , pp. 48-51
    • Peters, L.1
  • 2
    • 0029492041 scopus 로고
    • A Fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process
    • R. W. Sandage and J. A. Connelly, "A Fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process," in IEDM Tech. Dig., pp. 171-174, 1995.
    • (1995) IEDM Tech. Dig. , pp. 171-174
    • Sandage, R.W.1    Connelly, J.A.2
  • 3
    • 0030079770 scopus 로고    scopus 로고
    • High-sensitivity SOI MOS photodetector with self-amplification
    • H. Yamamoto, K. Taniguchi, and C. Hamaguchi, "High-sensitivity SOI MOS photodetector with self-amplification," Jpn. J. Appl. Phys., vol. 35, pp. 1382-1386, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1382-1386
    • Yamamoto, H.1    Taniguchi, K.2    Hamaguchi, C.3
  • 4
    • 84908167248 scopus 로고
    • A versatile, SOI BiCMOS technology with complementary lateral BJT's
    • S. A. Parke, F. Assaderaghi, J. Chen, J. King, C. Hu, and P. K. Ko, "A versatile, SOI BiCMOS technology with complementary lateral BJT's," in IEDM Tech. Dig., pp. 453-156, 1992.
    • (1992) IEDM Tech. Dig. , pp. 453-1156
    • Parke, S.A.1    Assaderaghi, F.2    Chen, J.3    King, J.4    Hu, C.5    Ko, P.K.6
  • 6
    • 0027592565 scopus 로고
    • Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET's
    • May
    • S. A. Parke, C. Hu, and P. K. Ko, "Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFET's" Electron Device Lett., vol. 14, pp. 234-236, May 1993.
    • (1993) Electron Device Lett. , vol.14 , pp. 234-236
    • Parke, S.A.1    Hu, C.2    Ko, P.K.3
  • 7
    • 0001726423 scopus 로고
    • Development of an integrated high speed silicon PIN photo-diode sensor
    • June
    • M. Kyomasu, "Development of an integrated high speed silicon PIN photo-diode sensor," IEEE Trans. Electron Devices, vol. 42, pp. 1093-1099, June 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1093-1099
    • Kyomasu, M.1
  • 9
    • 0029406037 scopus 로고
    • Comparative study of fully-depleted and body-grounded nonfully-depleted SOI MOSFET's for high performance analog and mixed signal circuits
    • Nov.
    • M. Chan, B. Yu, Z.-J. Ma, C. Nguyen, C. Hu, and P. K. Ko, "Comparative study of fully-depleted and body-grounded nonfully-depleted SOI MOSFET's for high performance analog and mixed signal circuits," IEEE Trans. Electron Devices, vol. 42, pp. 1975-1981, Nov. 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1975-1981
    • Chan, M.1    Yu, B.2    Ma, Z.-J.3    Nguyen, C.4    Hu, C.5    Ko, P.K.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.