Highly and variably sensitive complementary metal oxide semiconductor active pixel sensor using P-channel metal oxide semiconductor field effect transistor-type photodetector with transfer gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3470-3474

  Seo, Sang Ho ^a   Lee, Sung Ho ^a   Do, Mi Young ^a   Shin, Jang Kyoo ^a   Choi, Pyung ^a  

^a Kyungpook National University   (South Korea)

Author keywords

APS; CMOS; Photodetector; PMOSFET; Transfer gate

Indexed keywords

ELECTRIC POTENTIAL; IMAGING TECHNIQUES; LIGHTING; MOSFET DEVICES; PHOTOCURRENTS; PHOTODETECTORS;

ILLUMINATION LEVEL; IMAGE ACQUISITION SYSTEM; P-CHANNEL METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (PMOSFET); TRANSFER GATE;

CMOS INTEGRATED CIRCUITS;

EID: 33646913828     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3470     Document Type: Article

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