Nanoscale capacitance spectroscopy characterization of AlGaN/GaN heterostructure by current-sensing atomic force microscopy

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Zeng, Huizhong ^a   Sun, Haoming ^a   Luo, Wenbo ^a   Huang, Wen ^a   Wang, Zhihong ^a   Li, Yanrong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE; ALGAN/GAN HETEROSTRUCTURES; CAPACITANCE SPECTROSCOPY; CONCENTRATION OF; CONTACT RADIUS; MACROSCOPIC MEASUREMENTS; NANO SCALE; NUMERICAL CALCULATION; QUANTITATIVE CHARACTERIZATION; SCHOTTKY BARRIERS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ATOMIC FORCE MICROSCOPY; ATOMS; CAPACITANCE; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; PROBES; SCHOTTKY BARRIER DIODES; TWO DIMENSIONAL ELECTRON GAS;

ATOMIC SPECTROSCOPY;

EID: 67249100268     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3109209     Document Type: Article

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