Small angle X-ray scattering measurements of spatial dependent linewidth in dense nanoline gratings

Thin Solid Films

Volumn 517, Issue 20, 2009, Pages 5844-5847

  Wang, Chengqing ^a   Fu, Wei En ^b   Li, Bin ^c   Huang, Huai ^c   Soles, Christopher ^a   Lin, Eric K ^a   Wu, Wen li ^a   Ho, Paul S ^c   Cresswell, Michael W ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c The University of Texas at Austin   (United States)

Author keywords

Anisotropic wet etching; Electron beam lithography; Line gratings; Linewidth; Silicon wafer; Small angle X ray scattering

Indexed keywords

ANISOTROPIC WET ETCHING; CROSS SECTION; LINE GRATINGS; NANOLINES; NONUNIFORMITY; NORMAL INCIDENCE; PROXIMITY EFFECTS; RECTANGULAR SHAPES; SINGLE CRYSTAL SILICON; SMALL ANGLE X-RAY SCATTERING; SPATIAL VARIATIONS;

ANISOTROPIC ETCHING; ANISOTROPY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; LINEWIDTH; SCANNING ELECTRON MICROSCOPY; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; X RAY SCATTERING;

WET ETCHING;

EID: 66949165764     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.040     Document Type: Article

References (15)

1. International Technology Roadmap for Semiconductors, Metrology (2007). http://www.itrs.net/Links/2007ITRS/Home2007.htm http://www.itrs.net/Links/2007ITRS/Home2007.htm
2. Jones R.L., Hu T., Lin E.K., Wu W.L., Kolb R., Casa D.M., Bolton P.J., and Barclay G.G. Appl. Phys. Lett. 83/19 (2003) 4059
3. Hu T.J., Jones R.L., Wu W.L., Lin E.K., Lin Q.H., Keane D., Weigand S., and Quintana J. J. Appl. Phys. 96/4 (2004) 1983
4. Wang C.Q., Jones R.L., Lin E.K., Wu W.L., and Leu J. Appl. Phys. Lett. 90/19 (2007) 193122
5. Wang C.Q., Jones R.L., Lin E.K., Wu W.L., Rice B.J., Choi K.W., Thompson G., Weigand S.J., and Keane D.T. J. Appl. Phys. 102/2 (2007) 024901
6. Tolan M., Konig G., Brugemann L., Press W., Brinkop F., and Kotthaus J.P. Europhys. Lett. 20/3 (1992) 223
7. Metzger T.H., HajYahya K., Peisl J., Wendel M., Lorenz H., Kotthaus J.P., and Cargill G.S. J. Appl. Phys. 81/3 (1997) 1212
8. Yan M., and Gibaud A. J. Appl. Crystallogr. 40 (2007) 1050
9. Shen Q., Umbach C.C., Weselak B., and Blakely J.M. Phys. Rev., B 48/24 (1993) 17967
10. Baumbach T., and Lubbert D. J. Phys., D. Appl. Phys. 32 (1999) 726
11. Cresswell M.W., Guthrie W.F., Dixson R.G., Allen R.A., Murabito C.E., and De Pinillos J.V.M. J. Res. Natl. Inst. Stand. Technol. 111/3 (2006) 187
12. Allen R.A., Ende B.A.A., Cresswell M.W., Murabito C.E., Headley T.J., Guthrie W.F., Linholm L.W., Ellenwood C.H., and Bogardus E.H. IEEE Trans. Semicond. Manuf. 16/2 (2003) 239
13. Li B., Kang M.K., Lu K., Huang R., Ho P.S., Allen R.A., and Cresswell M.W. Nano Lett. 8/1 (2008) 92
14. All the uncertainty (±) presented in this work represents one standard deviation from the mean.
15. Certain equipment, instruments or materials are identified in this paper in order to adequately specify the experimental details. Such identification does not imply recommendation by the National Institute of Standards and Technology nor does it imply the materials are necessarily the best available for the purpose.