RM 8111: Development of a prototype linewidth standard

Journal of Research of the National Institute of Standards and Technology

Volumn 111, Issue 3, 2006, Pages 187-203

  Cresswell, Michael W ^a   Guthrie, William F ^a   Dixson, Ronald G ^a   Allen, Richard A ^a   Murabito, Christine E ^a   De Pinillos, J V Martinez ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

AFM; Calibration; CD; Dimensional standards; HRTEM; Latticeplane selective etch; Linewidth; Metrology; Reference materials; SCCDRM; Single crystal silicon; Traceability; Uncertainty

Indexed keywords

ATOMIC FORCE MICROSCOPY; MEASUREMENT THEORY; PRECISION ENGINEERING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CD; DIMENSIONAL STANDARDS; HRTEM; LATTICEPLANE SELECTIVE ETCH; REFERENCE MATERIALS; SCCDRM; SINGLE-CRYSTAL SILICON; TRACEABILITY; UNCERTAINTY;

STANDARDS;

EID: 33746075959     PISSN: 1044677X     EISSN: 1044677X     Source Type: Journal    
DOI: 10.6028/jres.111.016     Document Type: Article

References (18)

1. Report of Investigation of Prototype of RM 8110, Single-Crystal Critical Dimension Reference Materials, Semiconductor Electronics Division, Electronics and Electrical Engineering Laboratory, and Statistical Engineering Division, Information Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, April 30 (2001).
2. R. A. Allen, B. A. am Ende, M. W. Cresswell, C. E. Murabito, T. J. Headley, W. F. Guthrie, L. W. Linholm, C. H. Ellenwood, and E. H. Bogardus, Test Structures for Referencing Electrical Line-width Measurements to Silicon Lattice Parameters Using HRTEM, IEEE Transact. Semiconductor Manufacturing 16 (2), pp. 239-248 (2003).
3. W. Qin, Direct Space (Nano)Crystallography Via High-Resolution Transmission-Electron Microscopy, A Dissertation Presented to the Faculty of the Graduate School of the University Of Missouri-Rolla, in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Physics (2000).
4. M. W. Cresswell, B. Park, R. A. Allen, W. F. Guthrie, R. G. Dixson, and C. E. Murabito, Comparison of CD-Measurements Extracted from Test-Structure Features Having Linewidths in the Range 40 nm to 240 nm with SEM and IIRTEM Imaging, Proceedings of the IEEE International Conference on Microelectronic Test Structures, Vol. 18, pp. 1.1-16, April 2005, Leuven, Belgium (March 2005).
5. A. E. Vladar, M. T. Postek, and R. Vane, Active Monitoring and Control of Electron-Beam-Induced Contamination. Metrology, Inspection, and Process Control for Microlithography XV, Neal T. Sullivan, ed., SPIE Proceed. 4344, 835-843 (2001).
6. T. C. Isabell, P. E. Fischione, C. O'Keefe, M. U. Guraz, and V. P. Dravid, Plasma Cleaning And Its Applications For Electron Microscopy, Microsc. Microanal. 5, 126-135 (1999).
7. R. G. Dixson, A. Guerry, Reference Metrology Using a Next Generation CD-AFM, SPIE Proceed. 5375, 633-646 (2004).
8. R. G. Dixson, CD-AFM Reference Metrology at NIST and International SEMATECH, SPIE Proceed. 5752, 324-338 (2005).
9. P. J. Mohr and B. N. Taylor, CODATA recommended values of the fundamental physical constants: J. Phys. Chem. Ref. Data 28(6). 1713-1852 (1999).
10. This paper was also published in Rev. Mod. Phys. 72 (2), 351-495 (2000). The values of these constants are also available online atphysics.nist.gov/constants.
11. R. A. Allen, T. J. Headley, S. C. Everist, R. N. Ghoshtagore, M. W. Cresswell, and L. W. Linholm, High-resolution transmission electron microscopy calibration of critical dimension (CD) reference materials, IEEE Trans. Semiconduct. 14(1), 26-31 (2001).
12. R. A. Allen, A. Hunt, C. E. Murabito, B. Park, W. F. Outline, and M. W. Cresswell, Extraction of Critical Dimension Reference Feature CDs from New Test Structure Using HRTEM Imaging, Proceedings of the IEEE International Conference on Micro-electronic Test Structures, Vol. 18. Leuven, Belgium, April 2005, pp. 5-10.
13. B. A. am Ende, M. W. Cresswell, R. A. Allen, T. J. Headley, W. F. Guthrie, L. W. Linholm, E. H. Bogardus, and C. E. Murabito, Measurement of the Linewidth of Electrical Test-Structure Reference Features By Automated Phase-Contrast Image Analysis, Proceedings of the IEEE International Conference on Microelectronic Test Structures, Vol. 15, Cork. Ireland, April 2002, pp. 1-5.
14. Guide the Expression of Uncertainty in Measurement, ISO, Geneva, Switzerland, 1993.
15. B. N. Taylor and C. E. Kuyatt, Guidelines for Evaluating and Expressing the Uncertainty of NIST Measurement Results. NIST TN 1297(1994).
16. B. Efron, Computer-Intensive Methods in Statistics, Sci. Amer., 116-130, May 1983.
17. B. Efron and R. J.Tibshirani, Bootstrap Methods for Standard Errors, Confidence Intervals and Other Measures of Statistical Accuracy. Statistical Sci. 1, 54-77 (1986).
18. U.S. Divisional Patent Application Serial No. 09/834,482, TEST CHIP CARRIER, by Michael Cresswell et al., Attorney Docket No. 3983-PA2D NIST Docket #99-008D.