Field effect hydrogen sensor device with simple structure based on GaN

Sensors and Actuators, B: Chemical

Volumn 140, Issue 1, 2009, Pages 79-85

  Higuchi, Tadamune ^a   Nakagomi, Shinji ^a   Kokubun, Yoshihiro ^a  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

Channel resistance model; Field effect; GaN; High temperature; Hydrogen sensor; Simple process

Indexed keywords

CHANNEL RESISTANCE MODEL; FIELD EFFECT; GAN; HIGH TEMPERATURE; HYDROGEN SENSOR; SIMPLE PROCESS;

DIELECTRIC RELAXATION; DRAIN CURRENT; ELECTRODES; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; OXYGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SENSORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 66949113339     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.04.031     Document Type: Article

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