Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor

Electronics Letters

Volumn 40, Issue 25, 2004, Pages 1608-1609

  Cheng, C C ^a   Tsai, Y Y ^a   Lin, K W ^b   Chen, H I ^a   Hsu, W H ^a   Hong, C W ^a   Liu, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CONCENTRATION (PROCESS); GALLIUM COMPOUNDS; MOS CAPACITORS; MOSFET DEVICES; RESPONSE TIME (COMPUTER SYSTEMS); SENSORS; THERMAL EFFECTS;

FABRICATION PROCESS; HYDROGEN GASES; HYDROGEN SENSING; SENSING SYSTEMS;

TRANSISTORS;

EID: 11144306515     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046833     Document Type: Article

References (11)

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