Highly sensitive NOx gas sensor based on a Au/n-Si Schottky diode

Sensors and Actuators, B: Chemical

Volumn 84, Issue 2-3, 2002, Pages 226-230

  Tuyen, Le Thi Trong ^a   Vinh, Dang Xuan ^b   Khoi, Phan Hong ^a   Gerlach, Gerald ^c  

^a INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

^b HUE UNIVERSITY   (Viet Nam)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Gas sensors; Interfacial layer; Schottky barrier

Indexed keywords

ELECTRIC POTENTIAL; HETEROJUNCTIONS; NITROGEN OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

HETEROJUNCTION DIODES;

CHEMICAL SENSORS;

EID: 0037095362     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(02)00029-1     Document Type: Article

References (18)

1. Sensors for environmentally concerned gases - Recent trends in research for environmental gas sensors
2. 2 sensors: Current status and future prospects
3. 3 thin films activated by noble metals (Pb, Pt, Au) layers
4. The state of the art of gas sensing for environmental protection
5. x gas
6. x sensing behavior of metal phthalocyanine-doped polypyrrole/silicon heterojunction diode: Effect of doping
7. The ideality factor n of Au/n-Si Schottky diodes
8. Electrical properties of Au/n-Si Schottky diode, influenced by chemical treatment of the Si surfaces
9. Pd-Si Schottky diodes on chemically terminated silicon and their response to hydrogen
10. Study on hydrogen reactivity with surface chemical species of nanocrystalline porous silicon
11. x incorporation
12. A hydrogen-sensitive MOS field-effect transistor
13. A study of Pd/Si MIS Schottky barrier diode hydrogen detector
14. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes