Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

Journal of Electronic Materials

Volumn 30, Issue 1, 2001, Pages 23-26

  Kokubun, Y ^a   Nishio, J ^b   Abe, M ^a   Ehara, T ^a   Nakagomi, S ^a  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

COMPENSATION RATIO;

SEMICONDUCTING FILMS;

EID: 0035151775     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0210-0     Document Type: Article

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