Characterization of charge collection in photodiodes under mechanical strain: Comparison between organic bulk heterojunction and amorphous silicon

Advanced Materials

Volumn 21, Issue 18, 2009, Pages 1855-1859

  Ng, Tse Nga ^a   Wong, William S ^a   Lujan, Rene A ^a   Street, Robert A ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BOTTOM ELECTRODES; BULK HETEROJUNCTION; BUTYRIC ACIDS; CHARGE COLLECTION; DEVICE FAILURES; ELECTRICAL PROPERTY; ELECTRON DONORS; MECHANICAL STRAIN; MEH-PPV; METHOXY; METHYL ESTERS; ORGANIC PHOTODIODES; PHOTOSENSITIVE MATERIALS; PLASTIC SUBSTRATES; POLYETHYLENE NAPTHALATE; SILICON PHOTODIODE; ULTIMATE FAILURE;

CHROMIUM; ELECTRIC PROPERTIES; ESTERS; FATTY ACIDS; HETEROJUNCTIONS; PHOTODIODES; POLYMER BLENDS; SUBSTRATES;

AMORPHOUS SILICON;

EID: 66749150083     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200803046     Document Type: Article

References (27)

1. M. C. Scharber, D. Muhlbacher, M. Koppe, P. Denk, C. Waldauf, A. J. Heeger, C. J. Brabec, Adv. Mater. 2006, 18, 789.
2. P. W. M. Blom, V. D. Mihailetchi, L. J. A. Koster, D. E. Markov, Adv. Mater. 2007, 19, 1551.
3. P. Peumans, A. Yakimov, S. R. Forrest, J. Appl. Phys. 2003, 93, 3693.
4. T. Someya, Y. Kato, S. Iba, Y. Noguchi, T. Sekitani, H. Kawaguchi, T. Sakurai, IEEE Trans. Electron Devices 2005, 52, 2502.
5. S.-B. Rim, S. Zhao, S. R. Scully, M. D. McGehee, P. Peumans, Appl. Phys. Lett. 2007, 91, 243501.
6. R. Dinyari, S.-B. Rim, K. Huang, P. B. Catrysse, P. Peumans, Appl. Phys. Lett. 2008, 92, 091114.
7. P. I. Hsu, M. Huang, Z. Xi, S. Wagner, Z. Suo, J. C. Sturm, J. Appl. Phys. 2004, 95, 705.
8. H. C. Ko, M. P. Stoykovich, J. Song, V. Malyarchuk, W. M. Choi, C.-J. Yu, J. B. Geddes, III, J. Xiao, S. Wang, Y. Huang, J. A. Rogers, Nature 2008, 454, 748.
9. H. Gleskova, S. Wagner, Appl. Phys. Lett. 2001, 79, 3347.
10. L. Zhou, S. Jung, E. Brandon, T. N. Jackson, IEEE Trans. Electron Devices 2006, 53, 380.
11. J.-H. Ahn, H.-S. Kim, E.Menard, K. J. Lee, Z. Zhu, D.-H. Kim, R. G. Nuzzo, J. A. Rogers, I. Amlani, V. Kushner, S. G. Thomas, T. Duenas, Appl. Phys. Lett. 2007, 90, 213501.
12. T. Sekitani, Y. Kato, S. Iba, H. Shinaoka, T. Someya, T. Sakurai, S. Takagi, Appl. Phys. Lett. 2005, 86, 073511.
13. R. Jones, T. Johnson, W. Jordan, S. Wagner, J. Yang, S. Guha, in: Proc. of the 29th IEEE Photovoltaic Specialists Conf. New Orleans, LA 2002, p. 1214.
14. B. Weber, M. H. Brodsky, Phys. Rev. B 1977, 16, 3660.
15. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, Y. Goldstein, Phys. Rev. Lett. 1981, 47, 1480.
16. T. N. Ng, R. A. Lujan, S. Sambandan, R. A. Street, S. Limb, W. S. Wong, Appl. Phys. Lett. 2007, 91, 063505.
17. T. N. Ng, W. S. Wong, M. L. Chabinyc, S. Sambandan, R. A. Street, Appl. Phys. Lett. 2008, 92, 213303.
18. J. C. Blakesley, R. Speller, Med. Phys. 2008, 35, 225.
19. N. S. Sariciftci, L. Smilowitz, A. J. Heeger, F. Wudl, Science 1992, 258, 1474.
20. G. Parthasarathy, P. E. Burrows, V. Khalfin, V. G. Kozlov, S. R. Forrest, Appl. Phys. Lett. 1998, 72, 2138.
21. Z. Suo, E. Y. Ma, H. Gleskova, S. Wagner, Appl. Phys. Lett. 1999, 74, 1177.
22. H. Gleskova, S. Wagner, Z. Suo, Appl. Phys. Lett. 1999, 75, 3011.
23. R. A. Street, Hydrogenated Amorphous Silicon, Cambridge University Press, Cambridge 1991.
24. F. Yakuphanoglu, M. Sekerci, E. Evin, Phys. B 2006, 382, 21.
25. L. Goris, A. Poruba, L. Hodakova, M. Vanecek, K. Haenen, M. Nesladek, P. Wagner, D. Vanderzande, L. De Schepper, J. V. Manca, Appl. Phys. Lett. 2006, 88, 052113.
26. C. J. Brabec, A. Cravino, D. Meissner, N. S. Sariciftci, T. Fromherz, M. T. Rispens, L. Sanchez, J. C. Hummelen, Adv. Funct. Mater. 2001, 11, 374.
27. H. J. Snaith, L. Schmid-Mende, M. Gratzel, M. Chiesa, Phys. Rev. B 2006, 74, 045306.