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Volumn , Issue , 2002, Pages 1214-1217

Effects of mechanical strain on the performance of amorphous silicon triple-junction solar cells

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPRESSION TESTING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LAMPS; EQUIPMENT TESTING; PERFORMANCE; PLASTIC DEFORMATION; STAINLESS STEEL; STRAIN; TENSILE TESTING;

EID: 0036948748     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (5)
  • 1
    • 0000853145 scopus 로고    scopus 로고
    • Mechanics of rollable and foldable film-on-foil electronics
    • Z. Suo, E.Y. Ma, H. Gleskova, and S. Wagner, "Mechanics of rollable and foldable film-on-foil electronics", Applied Physics Letters 74, 1999, pp. 1177-1179.
    • (1999) Applied Physics Letters , vol.74 , pp. 1177-1179
    • Suo, Z.1    Ma, E.Y.2    Gleskova, H.3    Wagner, S.4
  • 2
    • 0000602777 scopus 로고    scopus 로고
    • Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies
    • J. Yang, A. Banerjee, and S. Guha, "Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies," Applied Physics Letters 70, 1997, pp. 2975 - 2977.
    • (1997) Applied Physics Letters , vol.70 , pp. 2975-2977
    • Yang, J.1    Banerjee, A.2    Guha, S.3
  • 4
    • 0035851452 scopus 로고    scopus 로고
    • Electron mobility in amorphous silicon thin-film transistors under compressive strain
    • H. Gleskova and S. Wagner, "Electron mobility in amorphous silicon thin-film transistors under compressive strain", Applied Physics Letters 79, 2001, pp. 3347-3349.
    • (2001) Applied Physics Letters , vol.79 , pp. 3347-3349
    • Gleskova, H.1    Wagner, S.2
  • 5
    • 0000180678 scopus 로고    scopus 로고
    • Failure resistance of amorphous silicon transistors under extreme in-plane strain
    • H. Gleskova, S. Wagner, and Z. Suo, "Failure resistance of amorphous silicon transistors under extreme in-plane strain", Applied Physics Letters 75, 1999, pp. 3011-3013.
    • (1999) Applied Physics Letters , vol.75 , pp. 3011-3013
    • Gleskova, H.1    Wagner, S.2    Suo, Z.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.