Growth of GaInP on misoriented substrates using solid source MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 249-254

  Orsila, S ^a   Tukiainen, A ^a   Uusimaa, P ^a   Dekker, J ^a   Leinonen, T ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; GALLIUM INDIUM PHOSPHIDE; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035398305     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00692-3     Document Type: Conference Paper

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