Real-time in situ spectroscopic ellipsometry of GaSb nanostructures during sputtering

Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

  Nerbo I S ^a   Le Roy, S ^b   Kildemo, M ^a   Sondergrd E ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b SAINT GOBAIN RECHERCHE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MEDIUM APPROXIMATION; EX-SITU ATOMIC FORCE MICROSCOPY; GROWTH REGIME; HEIGHT EVOLUTION; IN-SITU; ION SPUTTERING; LINEAR REGIME; LOW ENERGIES; OPTICAL MEASUREMENT;

ATOMIC FORCE MICROSCOPY; NANOSTRUCTURES; OPTICAL DATA PROCESSING; SPECTROSCOPIC ELLIPSOMETRY; SPUTTERING;

GALLIUM ALLOYS;

EID: 66549123291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133350     Document Type: Article

References (20)

1. L. Samuelson, Mater. Today 1369-7021 6, 22 (2003). 10.1016/S1369-7021(03) 01026-5
2. W. Wu, Appl. Phys. Lett. 0003-6951 90, 063107 (2007). 10.1063/1.2450651
3. A. Lafuma and D. Qúŕ, Nature Mater. 1476-1122 2, 457 (2003). 10.1038/nmat924
4. S. J. Wilson and M. C. Hutly, Opt. Acta 29, 993 (1982).
5. G. Renaud, R. Lazzari, C. Revenant, A. Barbier, M. Noblet, O. Ulrich, F. Leroy, J. Jupille, Y. Borensztein, C. R. Henry, J. -P. Deville, F. Scheurer, J. Mane-Mane, and O. Fruchart, Science 0036-8075 300, 1416 (2003). 10.1126/science.1082146
6. O. Plantevin, R. Gago, L. Vázquez, A. Biermanns, and T. H. Metzger, Appl. Phys. Lett. 0003-6951 91, 113105 (2007). 10.1063/1.2783964
7. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1987).
8. W. M. Duncan and S. A. Henck, Appl. Surf. Sci. 0169-4332 63, 9 (1993). 10.1016/0169-4332(93)90056-H
9. R. W. Collins, I. An, H. Fujiwara, J. Lee, Y. Lu, J. Koh, and P. I. Rovira, Thin Solid Films 0040-6090 313, 18 (1998). 10.1016/S0040-6090(97)00764-5
10. M. Kildemo, R. Brenot, and B. Dŕvillon, Appl. Opt. 0003-6935 37, 5145 (1998). 10.1364/AO.37.005145
11. I. S. Nerbø, M. Kildemo, S. Le Roy, I. Simonsen, E. Søndergrd, L. Holt, and J. Walmsley, Appl. Opt. 0003-6935 47, 5130 (2008). 10.1364/AO.47.005130
12. S. Le Roy, N. Brun, A. Lelarge, E. Søndergrd, and E. Barthel, " Self-sustained etch masking is at the origin of the formation of nanopillars during ion erosion of III-V semiconductors. " (unpublished).
13. M. Kildemo, I. S. Nerbø, E. Søndergrd, L. Holt, I. Simonsen, and M. Stachakovsky, Phys. Status Solidi C 1610-1634 5, 1382 (2008). 10.1002/pssc.200777903
14. J. E. Spanier and I. P. Herman, Phys. Rev. B 0163-1829 61, 10437 (2000). 10.1103/PhysRevB.61.10437
15. M. Schubert, Phys. Rev. B 0163-1829 53, 4265 (1996). 10.1103/PhysRevB.53. 4265
16. D. W. Berreman, J. Opt. Soc. Am. 0030-3941 62, 502 (1972). 10.1364/JOSA.62.000502
17. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A 0734-2101 6, 2390 (1988). 10.1116/1.575561
18. P. Sigmund, Phys. Rev. 184, 383 (1969). 10.1103/PhysRev.184.383
19. M. Castro, R. Cuerno, L. Vázquez, and R. Gago, Phys. Rev. Lett. 0031-9007 94, 016102 (2005). 10.1103/PhysRevLett.94.016102
20. S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt, and H. L. Hartnagel, Science 0036-8075 285, 1551 (1999). 10.1126/science.285.5433.1551