Nonlinear optical properties of Phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films

Optics Express

Volumn 17, Issue 9, 2009, Pages 7368-7376

  Imakita, Kenji ^a   Ito, Masahiko ^a   Fujii, Minoru ^a   Hayashi, Shinji ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALS; OPTICAL PROPERTIES; PHOSPHORUS; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SILICON;

FEMTOSECOND REGIMES; LINEAR ABSORPTION; NON-LINEAR OPTICAL PROPERTIES; NONLINEAR ABSORPTION COEFFICIENT; NONLINEAR OPTICAL RESPONSE; NONLINEAR REFRACTIVE INDEX; PHOSPHOSILICATE GLASS; Z-SCAN TECHNIQUE;

NONLINEAR OPTICS;

GLASS; NANOMATERIAL; PHOSPHORUS; SILICATE; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; LIGHT; MATERIALS TESTING; RADIATION SCATTERING; ULTRASTRUCTURE;

COMPUTER SIMULATION; GLASS; LIGHT; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MODELS, CHEMICAL; NANOSTRUCTURES; PHOSPHORUS; SCATTERING, RADIATION; SILICATES; SILICON;

EID: 66549113541     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.007368     Document Type: Article

References (40)

1. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Appl. Phys. Lett. 57, 1046-1048 (1990).
2. S. Takeoka, M. Fujii, and S. Hayashi, "Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime", Phys. Rev. B 62, 16820-16825 (2000).
3. C. Delerue, M. Lannoo, G. Allan, and E. Martin, "Theoretical descriptions of porous silicon", Thin Solid Films 255, 27-34 (1995).
4. P. Bettotti, M. Cazzanelli, L. Dal Negro, B. Danese, Z. Gaburro, C. J. Oton, G. Vijaya Prakash, and L. Pavesi, "Silicon nanostructures for photonics", J. Phys:Condens. Matter 14, 8253-8281 (2002).
5. L. Pavesi, Z. Gaburro, L. Dal Negro, P. bettotti, G. Vijaya Prakash, M. Cazzaneli, and C. J. Oton, "Nanostructured silicon as a photonic material", Opt. Lasers Eng. J. Opt. Soc. Am. B 39, 345-367 (2003).
6. S. Moon, A. Lin, B.H. Kim, P. R. Watekar, and W.-T. Han, "Linear and nonlinear optical properties of the optical fiber doped with silicon nano-particles", J. Non-Cryst. Solids 354, 602-606 (2008).
7. (3)", J. Appl. Phys. 91, 5564-5570 (2002).
8. Y. Kanemitsu, S. Okamoto, and A. Mito, "Third-order nonlinear optical susceptibility and photoluminescence in porous silicon", Phys. Rev. B 52, 10752-10755 (1995).
9. 2 deposited by plasma-enhanced chemical-vapor deposition", J. Appl. Phys. 103, 064309 (2008).
10. G. Vijaya Prakash, M. Cazzaneli, Z. Gaburro, L. Pavesi, and F. Lacona, G. Franzo, and F. Priolo., "Nonlinear optical properties ofsilicon nanocrystals grown by plasma-enhanced chemical vapor deposition", J. Appl. Phys. 91, 4607-4610 (2002).
11. K. Imakita, M. Ito, M. Fujii, and S. Hayashi, J. Appl. Phys. (to be published).
12. S. Vijayalakshmi, A. Lan, Z. lqbal, and H. Grebel, "Nonlinear optical properties of laser ablated silicon nanostructures", J. Appl. Phys. 92, 2490-2494 (2002).
13. S. Vijayalakshmi, M. A. George, and H. Grebel, "Nonlinear optical properties of silicon nanoclusters", Appl. Phys. Lett. 70, 708-710 (1997).
14. M. Yin, H.P. Li, S.H. Tang, and W. Ji, "Determination of nonlinear absorption and refraction by single Z-scan method", Appl. Phys. B 70, 587-591 (2000).
15. M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, and S. Hayashi, "Control ofphotoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities", Appl. Phys. Lett. 85, 1158-1160 (2004).
16. M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, and S. Hayashi, "Photoluminescence from impurity codoped and compensated Si nanocrystals", Appl. Phys. Lett. 87, 211919 (2005).
17. A. Mimura, M. Fujii, S. Hayashi, D. Kovalev, and F. Koch, "Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals", Phys. Rev. B 62, 12625-12627 (2000).
18. B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, and P. F. A. Alkemade, "Experimental investigation of band structure modification in silicon nanocrystals", Phys. Rev. B 64, 115308 (2001).
19. M. Fujii, A. Mimura, and S. Hayashi, "Hyperfine Structure of the Electron Spin Resonance of Phosphorus-Doped Si Nanocrystals", Phys. Rev. Lett. 89, 206805 (2002).
20. G. Cantele, E. Degoli, E. Luppi, R. Magori, D. Ninno, G. Iadonisi, and S. Ossicini, "First-principles study of n - and p -doped silicon nanoclusters", Phys. Rev. B 72, 113303 (2005).
21. G. Allan, C. Delerue, M. Lannoo, and E. Martin, "Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites", Phys. Rev. B 52, 11982-11988 (1995).
22. D. V. Melnikov and J. R. Chelikowsky, "Quantum Confinement in Phosphorus-Doped Silicon Nanocrystals", Phys. Rev. Lett. 92, 046802 (2004).
23. S. Ossicini, F. Iori, E. Degoli, E. Luppi, R. Magri, R. Poli, G. Cantele, F. Trani, and D. Ninno, "Understanding Doping In Silicon Nanostructures", IEEE J. Sel. Top. Quantum Electron. 12, 1585-1591 (2006).
24. M. Fujii, S. Hayashi, and K. Yamamoto, "Photoluminescence from B-doped Si nanocrystals", J. Appl. Phys. 83, 7953-7956 (1998).
25. D. A. G. Bruggeman, "Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen", Ann. Phys. 24, 636-679 (1935).
26. G. Lubberts, B. C. Burkey, F. Moser, and E. A. Trabka, "Optical properties of phosphorus-doped polycrystalline silicon layers", J. Appl. Phys. 52, 6870 (1981).
27. x alloy nanocrystals: Resonant photoluminescence study", J. Appl. Phys. 88, 5772-5776 (2000).
28. 2 films containing Si nanocrystals by P doping: An electron spin resonance study", J. Appl. Phys. 87, 1855-1857 (2000).
29. P. E. Schmid, "Optical absorption in heavily doped silicon", Phys. Rev. B 23, 5531-5536 (1981).
30. V. Sa-yakanit and H. R. Glyde, "Impurity-band density of states in heavily doped semiconductors: A variational calculation", Phys. Rev. B 22, 6222-6232 (1980).
31. E. L. de Oliveira, E. L. Albuquerque, J. S. de Sousa, and G. A. Farias, "Radiative transitions in P- and B-doped silicon nanocrystals", Appl. Phys. Lett. 94, 103114 (2009).
32. V. I. Klimov, Ch. J. Schwarz, and D. W. McBranch, and C. W. White, "Initial carrier relaxation dynamics in ion- implanted Si nanocrystals: Femtosecond transient absorption study", Appl. Phys. Lett. 73, 2603-2605 (1998).
33. S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, "Nonlinear optical response of Si nanostructures in a silica matrix", J. Appl. Phys. 88, 6418-6422 (2000).
34. 2 glassy matrix", J. Appl. Phys., 84, 6502-6506 (1998).
35. R. C. Miller, "Optical second harmonic generation in piezoelectric crystals", Appl. Phys. Lett. 5, 17 (1964).
36. C. C. Wang, "Empirical Relation between the Linear and the Third-Order Nonlinear Optical Susceptibilities", Phys. Rev. B 2, 2045-2048 (1970).
37. 2 glass", J. Am. Ceram. Soc. 76, 2486-2490 (2005).
38. 2 glasses", J. Opt. Soc. Am. B 16, 1904-1908 (1999).
39. G. Lenz, J. Zimmermann, T. Katsufuji, M. E. Lines, H. Y. Hwang, S. Spalter, R. E. Slusher, S.-W. Cheong, J. S. Sanghera, and I. D. Aggarwal, "Large Kerr effect in bulk Se-based chalcogenide glasses", Opt. Lett. 25, 254-256 (2000).
40. D. W. Hall, M. A. Newhouse, N. F. Borrelli, W. H. Dumbaugh, and D. L. Weidman, "Nonlinear optical susceptibilities of high-index glasses", Appl. Phys. Lett. 54, 1293 (1989).