Pressure-modulated alloy composition in Si(1-x)Gex nanowires

Nano Letters

Volumn 9, Issue 5, 2009, Pages 1775-1779

  Givan, Uri ^a   Patolsky, Fernando ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; BAND GAPS; BUILDING BLOCK; CHEMICAL COMPOSITIONS; COMPOSITION CONTROL; CRYSTALLINE STRUCTURE; DIRECT MODULATION; ENHANCED GROWTH; EXPERIMENTAL CONDITIONS; GAS FEEDSTOCKS; GROWTH MECHANISMS; GROWTH PARAMETERS; GROWTH PRESSURE; PRECURSOR GAS; PRESSURE DEPENDENCE; RATE-PRESSURE; SI/GE; SIDE EFFECT; SILICON GERMANIUM; SINGLE-CRYSTAL SI; UNIMOLECULAR DECOMPOSITIONS;

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; ELECTRIC WIRE; GERMANIUM; NANOWIRES; OPTOELECTRONIC DEVICES; SILICON; SILICON WAFERS; SINGLE CRYSTALS;

SILICON ALLOYS;

EID: 66549091897     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803657z     Document Type: Article

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