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Volumn 43, Issue 8, 1999, Pages 1619-1625

SiGe HBTs and ICs for optical-fiber communication systems

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; EPITAXIAL GROWTH; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; OPTICAL FIBERS; OPTICAL LINKS; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033173922     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00111-2     Document Type: Article
Times cited : (10)

References (15)
  • 2
    • 0030125125 scopus 로고    scopus 로고
    • 46 Gb/ s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology
    • Felder A, Möller M, Popp J, Böck J, Rein H-M. 46 Gb/ s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology. IEEE J Solid-State Circuits 1996;31(4):481-6.
    • (1996) IEEE J Solid-State Circuits , vol.31 , Issue.4 , pp. 481-486
    • Felder, A.1    Möller, M.2    Popp, J.3    Böck, J.4    Rein, H.-M.5
  • 3
    • 0030213937 scopus 로고    scopus 로고
    • Design consideration for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
    • Rein H-M, Möller M. Design consideration for very-high-speed Si-bipolar IC's operating up to 50 Gb/s. IEEE J Solid-State Circuits 1996;31(8):1076-90.
    • (1996) IEEE J Solid-State Circuits , vol.31 , Issue.8 , pp. 1076-1090
    • Rein, H.-M.1    Möller, M.2
  • 6
    • 0027889053 scopus 로고
    • Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors
    • Crabbé EF, Meyerson BS, Stork JMC, Harame DL. Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors. IEDM Tech Dig 1993:83-6.
    • (1993) IEDM Tech Dig , pp. 83-86
    • Crabbé, E.F.1    Meyerson, B.S.2    Stork, J.M.C.3    Harame, D.L.4
  • 8
    • 0029491765 scopus 로고
    • Self-aligned metal/IDP bipolar technology featuring 14 ps/70 GHz
    • Onai T, Ohue E, Tanabe M, Washio K. Self-aligned metal/IDP bipolar technology featuring 14 ps/70 GHz. IEDM Tech Dig 1995:699-702.
    • (1995) IEDM Tech Dig , pp. 699-702
    • Onai, T.1    Ohue, E.2    Tanabe, M.3    Washio, K.4
  • 9
    • 84920720791 scopus 로고    scopus 로고
    • Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45- GHz dynamic frequency divider
    • Washio K, Ohue E, Tanabe M, Onai T. Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45- GHz dynamic frequency divider. In: Proc. ESSDERC '96, 1996. p. 807-10.
    • (1996) Proc. ESSDERC '96 , pp. 807-810
    • Washio, K.1    Ohue, E.2    Tanabe, M.3    Onai, T.4
  • 10
    • 84886448021 scopus 로고    scopus 로고
    • A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate-delay
    • Washio K, Ohue E, Oda K, Tanabe M, Shimamoto H, Onai T. A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate-delay. IEDM Tech Dig 1997:795-8.
    • (1997) IEDM Tech Dig , pp. 795-798
    • Washio, K.1    Ohue, E.2    Oda, K.3    Tanabe, M.4    Shimamoto, H.5    Onai, T.6
  • 12
    • 0032095687 scopus 로고    scopus 로고
    • Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems
    • Kondo M, Oda K, Ohue E, Shimamoto H, Tanabe M, Onai T, Washio K. Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems. IEEE Trans Electron Devices 1998;45(6):1287-94.
    • (1998) IEEE Trans Electron Devices , vol.45 , Issue.6 , pp. 1287-1294
    • Kondo, M.1    Oda, K.2    Ohue, E.3    Shimamoto, H.4    Tanabe, M.5    Onai, T.6    Washio, K.7
  • 13
    • 0030194977 scopus 로고    scopus 로고
    • 2 cleaning of silicon wafers before low-temperature epitaxial growth by ultrahigh vacuum chemical vapor deposition
    • 2 cleaning of silicon wafers before low-temperature epitaxial growth by ultrahigh vacuum chemical vapor deposition. J Electrochem Soc 1996;143:2361.
    • (1996) J Electrochem Soc , vol.143 , pp. 2361
    • Oda, K.1    Kiyota, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.