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Journal of the Electrochemical Society

Volumn 154, Issue 1, 2007, Pages

A kinetic model for Si1-x gex growth from Si H4 and Ge H4 by CVD

(2) Yang, Xiaolong a,b Tao, Meng a,b

a The University of Texas at Arlington (United States)

b ELECTROCHEMICAL SOCIETY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLISION THEORY; GERMANE FLOW RATE; GERMANES; HYDROGEN TERMINATED SILICON SITES;

DECOMPOSITION; KINETIC THEORY; REACTION KINETICS; SILANES; SILICON ALLOYS;

CHEMICAL VAPOR DEPOSITION;

EID: 33845269309 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2386932 Document Type: Article

Times cited : (12)

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