Prospective crystallization of amorphous Si films for new Si TFTs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3259-3263

  Noguchi, Takashi ^a  

^a UNIVERSITY OF THE RYUKYUS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3D STRUCTURE; ACTIVE MATRIXES; AMORPHOUS SI FILMS; AMORPHOUS SILICON FILM; CRYSTAL GRAINS; CRYSTAL ORIENTATION CONTROL; EXCIMER LASER CRYSTALLIZATION; FLEXIBLE PANELS; FUNCTIONAL SYSTEMS; HIGH CARRIER MOBILITY; LASER CRYSTALLIZATION; LOCATION CONTROL; POLY-SI TFTS; POLY-SI THIN-FILM TRANSISTORS; SINGLE-CRYSTALLINE; SOLID-PHASE CRYSTALLIZATION; SOURCE AND DRAINS; ULTRA LOW TEMPERATURES;

AMORPHOUS FILMS; CARRIER MOBILITY; CRYSTAL ORIENTATION; CRYSTALLIZATION; EXCIMER LASERS; FLAT PANEL DISPLAYS; GAS LASERS; GRAIN GROWTH; POLYCRYSTALLINE MATERIALS; POLYSILICON; PULSED LASER APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR SWITCHES; SINGLE CRYSTALS; TECHNICAL PRESENTATIONS; THIN FILM TRANSISTORS; ULTRAVIOLET LASERS;

AMORPHOUS SILICON;

EID: 66449087824     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779502     Document Type: Conference Paper

References (27)

1. S. Morozumi et al., Digest of SID, p. 156 (1983).
2. K. Kanzaki, Dig. of Technical Papers on AM-LCD 01, p. 71 (2001).
3. T. Noguchi, A. J. Tang, J. A. Tsai, and R. Reif, IEEE Trans. Electron. Devices 43, 1454 (1966).
4. T. Noguchi, H. Tsukamoto, T. Suzuki, and H. Masuya, Ext. Abst. Int. Conf. SSDM, p. 620 (1991).
5. T. Urabe, T. Sasaoka, K. Tatsuki, and J. Takaki, Dig. of SID, p. 161 (2007).
6. D. P. Gosain, T. Noguchi, and S. Usui, Jpn. J. Appl. Phys. 39, L179 (2000).
7. T. Noguchi, J. Y. Kwon, J. S. Jung, J. M. Kim, K. B. Park, H. Lim, D. Y. Kim, H. S. Cho, H. X. Yin, and W. X. Xianyu, Jpn. J. Appl. Phys. 45, 4321 (2006).
8. T. Noguchi, H. Hayashi, and T. Ohshima, Jpn. J. Appl. Phys. Lett. 25, L121 (1986).
9. T. Noguchi, K. Tajima, and Y. Morita, Mater. Res. Soc. Symp. Proc. 146, 35 (1989).
10. R. S. Sposil and J. S. Im, Appl. Phys. Lett. 69, 2864 (1996).
11. N. Matsuo and H. Hamada, IEICE Tech. Report, SDM 200-213 (2000).
12. K. B. Park, H. S. Cho, H. X. Yin, J. S. Jung, D. Y. Kim, W. X. Xianyu, J. Y. Kwon, Y. S. Park, and T. Noguchi, Proc. IDW, p. 315 (2004).
13. D. Debarre, G. Kerrien, T. Noguchi, and J. Boulmer, IEICE Trans. Electron. E 85-C, 1098 (2002).
14. H. Lim, H. X. Yin, W. X. Xianyu, J. Y. Kwon, X. X. Zhang, H. S. Cho, J. M. Kim, K. B. Park, D. Y. Kim, J. S. Jung, and T. Noguchi, J. Korean Phys. Soc. 48, S47 (2006).
15. T. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic Publishers, 1988), p. 112.
16. T. Noguchi, Dig. of Technical Papers on AM FPD 07, p. 57 (2007).
17. D. Y. Kim, J. Y. Kwon, J. S. Jung, K. B. Park, H. S. Cho, H. Lim, J. M. Kim, H. X. Yin, X. X. Zhang, and T. Noguchi, J. Korean Phys. Soc. 48, S61 (2006).
18. J. Y. Kwon, J. Y. Kwon, J. S. Jung, K. B. Park, J. M. Kim, H. Lim, S. Y. Lee, J. M. Kim, T. Noguchi, J. H. Hur, and J. Jang, Digest of SID, 34.2 (2006).
19. T. Noguchi and Y. Ikeda, Sony Research Forum, p. 200 (1992).
20. Y. Ikeda and T. Noguchi, Proc. of the 44th. Symp. on Semi-conductor and Integrated Technology, p. 187 (1993).
21. T. Noguchi, Jpn. J. Appl. Phys. 32, 1584 (1993).
22. T. Noguchi, S. Usui, D. P. Gosain, and Y. Ikeda, Mater. Res. Soc. Symp. Proc. 557, 213 (1999).
23. H. X. Yin, W. X. Xinayu, H. S. Cho, X. X. Zhang, J. S. Jung, D. Y. Kim, H. Lim, K. B. Park, J. M. Kim, J. Y. Kwon, and T. Noguchi, IEEE Electron Device Lett. 27, 35 (2006).
24. K. Nomoto, D. P. Gosain, T. Noguchi, S. Usui, and Y. Mori, Mater. Res. Soc. Symp. Proc. 571, 25 (2000).
25. W. X. Xianyu, H. S. Cho, J. Y. Kwon, H. X. Yin, and T. Noguchi, Mater. Res. Soc. Symp. Proc. 830, 159 (2005).
26. H. S. Cho, W. X. Xianyu, X. X. Zhang, H. X. Yin, and T. Noguchi, Jpn. J. Appl. Phys. 45, 7682 (2006).
27. W. H. Lee, S. Y. Oh, C. G. Ahn, and W. J. Cho, IEICE Tech. Report, SDM2007, p. 173 (2007).