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Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 159-164

Excimer (XeCl) laser annealing of PbZ0.4Ti0.6O 3 thin film at low temperature for TFT FeRAM application

(5) Xianyu, W X a Cho, H S a Kwon, J Y a Yin, H X a Noguchi, T a,b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC INSULATORS; EXCIMER LASERS; LEAD COMPOUNDS; LOW TEMPERATURE EFFECTS; NONVOLATILE STORAGE; PEROVSKITE; POLYSILICON; RANDOM ACCESS STORAGE; SOL-GELS; SUBSTRATES; THIN FILM TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

GLASS SUBSTRATES; LASER ANNEALING; LASER ENERGY DENSITY; NON-VOLATILE MEMORY DEVICES;

FERROELECTRIC THIN FILMS;

EID: 20344406213 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

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