Low temperature Si dot thin-film-transistor memory

Materials Research Society Symposium - Proceedings

Volumn 571, Issue , 1999, Pages 25-30

  Nomoto, K ^a   Gosain, D P ^a   Noguchi, T ^a   Usui, S ^a   Mori, Y ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TEMPERATURE; THRESHOLD VOLTAGE;

SILICA FILM; SILICON NANOCRYSTALS; TUNNEL OXIDE FORMATION; WRITE ERASE OPERATION;

THIN FILM TRANSISTORS;

EID: 0033746662     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-571-25     Document Type: Article

References (7)

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