The role of the growth temperature for the SiN interlayer deposition in GaN

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2039-2042

  Böttcher, Tim ^a   Dennemarck, Jens ^a   Kröger, Roland ^a   Figge, Stephan ^a   Hommel, Detlef ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN-BASED STRUCTURES; GROUP III NITRIDES; ISLAND GROWTH MODE; METAL-ORGANIC VAPOR PHASE EPITAXY; SIN INTERLAYERS; SURFACE COVERAGES; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES;

COMPOSITE FILMS; DEPOSITION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY;

SILICON NITRIDE;

EID: 79960874714     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303370     Document Type: Conference Paper

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