The role of point defects in ion beam induced crystallization of silicon investigated by molecular dynamics simulations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 119-124

  Weber, B ^a   Gartner K ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

a c interface; Crystallization; MD simulation; Point defects

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; MOLECULAR DYNAMICS; POINT DEFECTS;

INTERSTITIALS; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC); STILLINGER-WEBER POTENTIAL; VACANCIES;

AMORPHOUS SILICON;

EID: 0035302587     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00578-4     Document Type: Conference Paper

References (20)