Resist process control for 32-nm logic node and beyond with NA > 1.30 immersion exposure tool

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Nagahara, Seiji ^a   Takahata, Kazuhiro ^b   Nakagawa, Seiji ^b   Murakami, Takashi ^a   Takeda, Kazuhiro ^a   Nakamura, Shinpei ^a   Ueki, Makoto ^a   Satake, Masaki ^b   Ema, Tatsuhiko ^b   Fujise, Hiroharu ^b   Yonemitsu, Hiroki ^b   Seino, Yuriko ^b   Nakagawa, Shinichiro ^b   Asano, Masafumi ^b   Kitamura, Yosuke ^b   Uchiyama, Takayuki ^a   Mimotogi, Shoji ^b   Tominaga, Makoto ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

2D pattern deformation; 32 nm node logic; Acid diffusion control; ArF immersion lithography; Hole shrink; Low kl lithography; LWR; Resist pattern collapse

Indexed keywords

2D-PATTERN DEFORMATION; 32-NM NODE LOGIC; ACID DIFFUSION CONTROL; ARF IMMERSION LITHOGRAPHY; HOLE SHRINK; LOW-KL LITHOGRAPHY; LWR; RESIST PATTERN COLLAPSE;

ACIDS; DEFORMATION; DIFFUSION; LITHOGRAPHY; NANOTECHNOLOGY; PHOTORESISTORS; PHOTORESISTS;

PROCESS CONTROL;

EID: 65849251621     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813498     Document Type: Conference Paper

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