Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 149-153

  Nyk, M ^a   Kudrawiec, R ^a   Misiewicz, J ^a   Paszkiewicz, R ^a   Korbutowicz, R ^a   Kozlowski, J ^a   Serafinczuk, J ^a   Strek, W ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH   (Poland)

Author keywords

A1. Photoluminescence; A1. X ray diffraction; A3. HVPE; A3. MOVPE; B1. GaN

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CALCINATION; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ENERGY GAP; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; ZEOLITES;

BAND GAPS; DIFFRACTION PEAKS; HORIZONTAL QUARTZ REACTORS; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 15844393489     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.096     Document Type: Article

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