Characterization of reactively sputtered c-axis orientation (Al, B)N films on diamond

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 4753-4757

  Song, Jen Hao ^a   Wang, Sheng Chang ^b   Sung, James C ^c   Huang, Jow Lay ^a,d   Lii, Ding Fwu ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d KUN SHAN UNIVERSITY   (Taiwan)

^e CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Aluminum nitride; Boron nitride; Diamond

Indexed keywords

AFM; ALN; ALN LAYERS; C-AXIS ORIENTATIONS; CO-SPUTTERING TECHNIQUES; CONTROL FACTORS; DIAMOND WAFERS; FILM QUALITY; NITROGEN CONCENTRATIONS; PREFERRED ORIENTATIONS; PROCESS CONDITION; SI WAFER; SPUTTERING POWER; SPUTTERING TIME; SUBSTRATE TEMPERATURE; TEM IMAGES; WURTZITE; XRD , TEM;

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; BORON; BORON NITRIDE; DIAMONDS; METALLIC FILMS; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPUTTERING; ZINC SULFIDE;

DIAMOND FILMS;

EID: 65649136981     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.125     Document Type: Article

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