Diffusion barrier capability of Zr-Si films for copper metallization with different substrate bias voltage

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5593-5596

  Wang, Ying ^a   Cao, Fei ^a   Shao, Lei ^a   Ding, Ming hui ^a  

^a HARBIN ENGINEERING UNIVERSITY   (China)

Author keywords

Cu interconnection; Diffusion barrier; Magnetron sputtering; Zr Si

Indexed keywords

AMORPHOUS STRUCTURES; AS-DEPOSITED STATE; BARRIER CAPABILITY; COMPARISON STUDY; CONTACT SYSTEMS; COPPER METALLIZATION; CU INTERCONNECTION; CU METALLIZATION; DIFFERENT SUBSTRATES; MASS DENSITIES; NEGATIVE SUBSTRATES; REACTIVE MAGNETRON SPUTTERING; SEM IMAGE; SI FILMS; SI SUBSTRATES; SUBSTRATE BIAS; SUBSTRATE BIAS VOLTAGES; XRD MEASUREMENTS; ZR-SI;

BIAS VOLTAGE; DIFFUSION BARRIERS; DIFFUSION IN SOLIDS; FILM GROWTH; MAGNETRONS; METALLIZING; SILICON; SUBSTRATES; ZIRCONIUM;

AMORPHOUS SILICON;

EID: 65649094119     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.001     Document Type: Article

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