GaN-based high electron-mobility transistors for microwave and RF control applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 1 I, 2002, Pages 4-8

  Drozdovski, Nikolai V ^b   Caverly, Robert H ^a,b  

^a IEEE

^b Villanova University   (United States)

Author keywords

Gallium nitride; High electron mobility transistors; Microwave control

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; MICROWAVE DEVICES; PHASE SHIFT; THRESHOLD VOLTAGE;

CAPACITIVE REACTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036210899     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.981235     Document Type: Article

References (14)

1. Microwave switching with GaAs FET's
2. GaAs FET RF switches
3. Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements
4. Modeling and design of GaAs MESFET control devices for broad-band applications
5. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
6. Microwave performance of AlGaN/GaN inverted MODFET's
7. Microwave operation of GAN/AlGaN-doped channel heterostructure field effect transistors
8. Measured microwave power performance of AlGaN/GaN MODFET
9. GAN microwave electronics
10. GaN based transistor for high power applications