Development and characteristic analysis of MOS AlGaN/GaN HEMTs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 29, Issue 8, 2008, Pages 1557-1560

  Wang, Chong ^a   Yue, Yuanzheng ^a   Ma, Xiaohua ^a   Hao, Yue ^a   Feng, Qian ^a   Zhang, Jincheng ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AJGaN GaN; Dielectric gate; High electron mobility transistors

Indexed keywords

CORUNDUM; DRAIN CURRENT; ELECTRON BEAMS; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOS CAPACITORS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS;

AJGAN/GAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; CHARACTERISTIC ANALYSIS; DIELECTRIC-GATE; GATE LEAKAGE CURRENTS; HIGH ELECTRON MOBILITIES; MAXIMUM DRAIN CURRENTS; MAXIMUM TRANSCONDUCTANCES; SAPPHIRE SUBSTRATES; SCHOTTKY GATES; SOURCE AND DRAINS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54049155815     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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