Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high magnetoresistance and low resistance

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 22, 2001, Pages

  Han, Xiu Feng ^a   Yu, Andrew C C ^a   Oogane, Mikihiko ^a   Murai, Junichirou ^a   Daibou, Tadaomi ^a   Miyazaki, Terunobu ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE; COBALT DERIVATIVE; COPPER COMPLEX; IRIDIUM COMPLEX; IRON DERIVATIVE; MANGANESE DERIVATIVE; NICKEL COMPLEX; TANTALUM;

ANISOTROPY; ARTICLE; ELECTRIC CONDUCTIVITY; MAGNETISM; MATHEMATICS; TEMPERATURE DEPENDENCE; WAVEFORM;

EID: 0000631535     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.224404     Document Type: Article

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