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Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

Study of boron diffusion in MgO in CoFeB|MgO film stacks using parallel electron energy loss spectroscopy

(5) Mukherjee, Sankha S a MacMahon, David b Bai, Feiming a Lee, Chih Ling c Kurinec, Santosh K a

a ROCHESTER INSTITUTE OF TECHNOLOGY (United States)

b MICRON TECHNOLOGY INC (United States)

c VEECO INSTRUMENTS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; BORON COMPOUNDS; COBALT COMPOUNDS; DIFFUSION IN SOLIDS; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; NUCLEAR INSTRUMENTATION; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

ANNEALED FILMS; B DIFFUSIONS; BORON DIFFUSIONS; DEFECT STATE; DIFFUSION LENGTHS; MAGNETIC TUNNEL JUNCTIONS; MGO FILMS; PARALLEL ELECTRON ENERGY LOSS SPECTROSCOPIES; TEMPERATURE RANGES;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 61349168350 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3090035 Document Type: Article

Times cited : (20)

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