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Journal of Applied Physics

Volumn 95, Issue 11 II, 2004, Pages 6936-6938

Influence of barrier overoxidation and annealing on the inelastic spin-dependent tunneling in AlO x-based junctions

(5) Dimopoulos, T a,b Henry, Y a Da Costa, V a Tiusan, C a,c Ounadjela, K a,d

a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG (France)

b SIEMENS AG (Germany)

c INSTITUT JEAN LAMOUR (France)

d CYPRESS SEMICONDUCTOR (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTIFICIAL ANTIFERROMAGNETS (AAF); JUNCTION MAGNETORESISTANCE (JMR); MAGNETIC JUNCTIONS; SPIN POLARIZATION; TUNNEL BARRIERS;

ALUMINUM COMPOUNDS; ANNEALING; ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; FERROMAGNETIC MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; MAGNETIC DEVICES; MAGNETIC MOMENTS; MAGNETIZATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING; MICROSTRUCTURE; OXIDATION; PHONONS; TRANSMISSION ELECTRON MICROSCOPY;

TUNNEL JUNCTIONS;

EID: 2942642281 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1667411 Document Type: Conference Paper

Times cited : (6)

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