Critical lateral dimension for a nanoscale-patterned heterostructure using the finite element method

Semiconductor Science and Technology

Volumn 24, Issue 2, 2009, Pages

  Ye, Han ^a   Lu, Pengfei ^a   Yu, Zhongyuan ^a   Han, Lihong ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; CRITICAL VALUES; DISLOCATION-FREE; FINITE-ELEMENT METHODS; GAAS SUBSTRATES; HETEROSTRUCTURE; INTERFACIAL DISLOCATIONS; LATERAL DIMENSIONS; MISFIT DISLOCATIONS; NANO-SCALE; THREE-DIMENSIONAL MODELS; THREE-DIMENSIONAL STRESS;

EPITAXIAL LAYERS; GALLIUM; GALLIUM ALLOYS; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; STRESS RELIEF; THREE DIMENSIONAL;

FINITE ELEMENT METHOD;

EID: 65549138576     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/2/025029     Document Type: Article

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