Influence of strain-reducing layer on strain distribution of self-organized InAs/GaAs quantum dot and redshift of photoluminescence wavelength

Chinese Physics Letters

Volumn 25, Issue 5, 2008, Pages 1850-1853

  Liu, Yu Min ^a   Yu, Zhong Yuan ^a   Ren, Xiao Min ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; ENERGY GAP; FINITE ELEMENT METHOD; III-V SEMICONDUCTORS; INDIUM ARSENIDE; OPTICAL FIBER COMMUNICATION; OPTICAL FIBERS; PHOTOLUMINESCENCE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; WAVE FUNCTIONS;

HORIZONTAL STRAIN; INAS-GAAS QUANTUM DOTS; NUMERICAL RESULTS; PHOTOLUMINESCENCE WAVELENGTH; RED SHIFT; SELF-ORGANISED; STRAIN COMPONENTS; STRAIN DISTRIBUTIONS; STRAIN REDUCING LAYERS; VERTICAL STRAIN;

NANOCRYSTALS;

EID: 46749092942     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/5/089     Document Type: Article

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