Growth of segmented gold nanorods with nanogaps by the electrochemical wet etching technique for single-electron transistor applications

Nanotechnology

Volumn 20, Issue 12, 2009, Pages

  Kim, Gil Ho ^a,b   Hoang, Nguyen Van ^c   Kumar, Sanjeev ^c  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA TEMPLATES; BARRIER THICKNESS; DE BROGLIE WAVELENGTHS; ELECTROCHEMICAL PROCESS; ETCHING METHODS; GOLD NANORODS; MULTI SEGMENTS; NANO GAPS; PLATING SOLUTIONS; QUANTUM-TUNNELING; SINGLE-ELECTRON TRANSISTORS; WET ETCHING TECHNIQUES;

CAPACITANCE MEASUREMENT; FABRICATION; SILVER; SILVER ALLOYS; SILVER PLATING; WET ETCHING;

NANORODS;

ALUMINUM OXIDE; CHLORMETHINE; GOLD; NANOROD; SILVER; NANOTUBE;

ARTICLE; DEVICE; ELECTROCHEMISTRY; GROWTH RATE; GROWTH REGULATION; POROSITY; PRIORITY JOURNAL; SEMICONDUCTOR; SINGLE ELECTRON TRANSISTOR; CHEMISTRY; ELECTROCHEMICAL ANALYSIS; EQUIPMENT DESIGN; METHODOLOGY; SCANNING ELECTRON MICROSCOPY; ULTRASTRUCTURE; X RAY DIFFRACTION;

ELECTROCHEMICAL TECHNIQUES; EQUIPMENT DESIGN; GOLD; MICROSCOPY, ELECTRON, SCANNING; NANOTUBES; SILVER; TRANSISTORS; X-RAY DIFFRACTION;

EID: 65549122501     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/12/125607     Document Type: Article

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