Optimum ambient N2 pressure during HfAlO pulsed-laser deposition in Pt/SBT/HfAlO/Si field effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1585-1587

  Takahashi, M ^a   Horiuchi, T ^a   Wang, S ^a   Li, Q H ^a   Sakai, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL OXIDE; BUFFER LAYERS;

HAFNIUM;

EID: 49749103646     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2952464     Document Type: Article

References (10)

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