Characterization of metal-ferroelectric-semiconductor structure using ferroelectric polymer polyvinylidene fluoride-trifluoroethylene (pvdf-trfe) (51/49)

Integrated Ferroelectrics

Volumn 98, Issue 1, 2008, Pages 121-127

  Kim, Dong Won ^a   Kim, Jeong Hwan ^a   Kim, Joo Nam ^a   Park, Hyung Jin ^a   Jeon, Ho Seung ^a   Park, Byung Eun ^a  

^a University of Seoul   (South Korea)

Author keywords

Ferroelectric polymer; MFS; One transistor type FeRAMs; PVDF TrFE

Indexed keywords

CAPACITANCE VOLTAGE; CRYSTALLINITIES; FERROELECTRIC HYSTERESIS LOOP; FERROELECTRIC POLYMER; FERROELECTRIC POLYMERS; FERROELECTRIC RANDOM ACCESS MEMORIES; FILM-THICKNESS; GRAIN SIZE; LOW VOLTAGES; MEMORY WINDOW; METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE; METALFERROELECTRIC-SEMICONDUCTOR; MFS; ONE TRANSISTOR-TYPE FERAMS; POLYVINYLIDENE FLUORIDES; PVDF-TRFE; SILICON SUBSTRATES; SPIN-COATING METHOD; TRIFLUOROETHYLENE;

ELECTRIC POTENTIAL; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; POLYMERS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DIODES; THICK FILMS; THIN FILMS; TRANSISTORS; WINDOWS;

FERROELECTRIC FILMS;

EID: 65449179663     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802092548     Document Type: Article

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