Enhancement of memory retention time of mfis structure with sbt ferroelectric and sio2 buffer layers treated by nitrogen radical irradiation

Integrated Ferroelectrics

Volumn 96, Issue 1, 2008, Pages 27-39

  Van Hai, Le ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

AFM; Memory window; MFIS; Radical; SBT; SEM; SrBi2Ta2O9; UV PYS; XPS

Indexed keywords

AFM; MEMORY WINDOW; MFIS; RADICAL; SBT; SEM; SRBI2TA2O9; UV-PYS; XPS;

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; FERROELECTRICITY; IRRADIATION; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE MORPHOLOGY; TANTALUM; WINDOWS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 65449122070     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802074108     Document Type: Article

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